99.99% high purity beta sic nano powders

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99.99% high purity beta sic nano powders Our 4N nano β-SiC (99.99% purity) is precision-synthesized via CVD, delivering ultra-fine particle size with exceptional sintering activity for high-density ceramic components. It thrives in the most demanding semiconductor environments — from CMP chucks and lithography stages to plasma etch focus rings and chamber liners. Its chemical inertness and minimal metal impurity outgassing maximize chip yield where it matters most. Trusted by leading fabs and equipment makers worldwide. more
Monodisperse spherical Nano SiO₂ aqueous dispersion/colloid This transparent SiO₂ aqueous dispersion is synthesized via patented sol-gel technology, featuring optical excellence visible light transmittance and shelf life >18 months under ambient storage. It is widely used in electronics as low-k dielectric materials, in biomedicine as drug carriers， and in optics for anti-reflection coatings. more
Magnéli Phase Nano Titanium suboxide Ti₄O₇ Powder Magnéli phase Nano titanium suboxide (Ti₄O₇) is an advanced functional material with a unique crystal structure, appearing as a blue-black powder with a precisely controlled particle size of 200–300 nm and a purity of up to 99.9%. As an important member of the titanium oxide family, Ti₄O₇ combines excellent electrical conductivity, chemical stability, and catalytic activity, making it an ideal choice for new energy, environmental protection, and electronics applications. more
Boron Nitride Nanotubes(BNNTs): High Thermal Conductivity Heat Dissipation Fillers BNNTs share the tubular structure of carbon nanotubes but deliver fundamentally different properties: electrical insulation, superior thermal stability (up to 900°C in air), and high thermal conductivity. With a wide bandgap of ~5.5 eV, they offer consistent, predictable performance where CNTs fall short. more
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99.99% high purity beta sic nano powders

Our 4N nano β-SiC (99.99% purity) is precision-synthesized via CVD, delivering ultra-fine particle size with exceptional sintering activity for high-density ceramic components. It thrives in the most demanding semiconductor environments — from CMP chucks and lithography stages to plasma etch focus rings and chamber liners. Its chemical inertness and minimal metal impurity outgassing maximize chip yield where it matters most. Trusted by leading fabs and equipment makers worldwide.

product origin:
CN
shipping port:
Shenzhen,Shanghai,Guangzhou
color:
Grey green
lead time:
in stock
payment:
T/T, PAYPAL

pPoduct Details

4N Nano-Silicon Carbide (β-SiC): Properties and Applications

99.99% beta sic Material Overview

Nano-Silicon Carbide (Nano-SiC) is a critical third-generation wide-bandgap semiconductor material. Among its polymorphs, β-phase silicon carbide (β-SiC, also known as 3C-SiC) features a cubic crystal structure, offering high purity, ultra-fine particle size, and excellent comprehensive properties. It serves as the core foundational material for manufacturing high-end silicon carbide devices.

99.99% beta sic Preparation Process

The production of high-purity nano-SiC by Hongwu Nano adopts the CVD (Chemical Vapor Deposition) method. By precisely controlling process parameters such as reactive gas ratios, temperature, and pressure, it enables accurate regulation of powder purity, particle size distribution, and crystal structure. This process consistently produces nanoscale β-SiC powder with purity exceeding 99.99% (4N), meeting the stringent purity requirements of the semiconductor manufacturing industry.

99.99% beta sic Core Performance Characteristics

1. Outstanding Physical Properties

β-SiC exhibits extremely high hardness (Mohs hardness 9.5), second only to diamond and cubic boron nitride, giving it inherent advantages in wear resistance and precision machining applications. Its thermal conductivity is excellent (up to 490 W/(m·K)), with a low coefficient of thermal expansion and outstanding thermal shock resistance, enabling it to maintain structural stability in extreme temperature environments. Additionally, β-SiC has a moderate density (3.21 g/cm³) and exceptionally high specific stiffness, facilitating lightweight design of precision motion components.

2. Excellent Chemical Stability

High-purity β-SiC demonstrates strong chemical inertness, resisting acid and alkali corrosion with outstanding oxidation resistance. In high-temperature, highly corrosive semiconductor process environments, it maintains long-term stable service performance, significantly extending the service life of critical components.

3. Superior Semiconductor Characteristics

As a wide-bandgap semiconductor material, β-SiC has a bandgap of approximately 2.3 eV, high electron saturation drift velocity, large breakdown electric field strength, and good thermal stability. These properties make it valuable not only as a structural material but also in specific electronic device applications.

4. Nanoscale Effects

When β-SiC particle size is reduced to the nanoscale, the material exhibits significant surface effects, small-size effects, and quantum size effects. Nanopowders possess extremely large specific surface areas and high sintering activity, enabling densification sintering at relatively low temperatures—advantageous for producing high-performance, high-density silicon carbide ceramic components.

99.99% beta sic Primary Application Fields

1. Critical Components in Semiconductor Manufacturing Equipment

In various stages of semiconductor chip manufacturing, precision components sintered from high-purity, ultra-fine β-SiC powder play irreplaceable roles:

Grinding/Polishing Chucks: In wafer substrate grinding and Chemical Mechanical Polishing (CMP) processes, SiC chucks leverage their high hardness, high flatness, and excellent wear resistance to provide stable and reliable support and vacuum holding platforms for wafers, ensuring machining precision and surface quality.

Lithography Chucks: In photolithography processes, SiC chucks are used to precisely fix and position wafers. Their extremely low coefficient of thermal expansion guarantees dimensional stability under complex thermal conditions, thereby ensuring high-precision transfer of lithographic patterns.

Inspection Chucks: During wafer inspection, SiC chucks provide stable wafer loading platforms for various optical and electrical inspection equipment. Their high stiffness and low vibration characteristics help improve inspection resolution and reliability.

Precision Motion Stages: Precision motion systems in semiconductor equipment impose extremely high requirements on material stiffness, thermal stability, and lightweight design. Silicon carbide ceramics, with their high specific stiffness, low thermal expansion, and excellent damping characteristics, are ideal materials for manufacturing high-precision linear motor guideways, air-bearing components, and other motion parts.

High-Purity SiC Components for Etching Processes: In plasma etching processes, equipment interiors are exposed to highly corrosive gases and high-temperature plasma. High-purity SiC components (such as focus rings, gas distribution plates, chamber liners, etc.) effectively ensure etching process uniformity and chip yield by virtue of their corrosion resistance, plasma bombardment resistance, and low metal impurity outgassing properties.

Precision Motion Systems for Packaging and Testing: In chip packaging and final testing stages, SiC materials are used to manufacture high-precision pick-and-place and transfer mechanisms, ensuring packaging accuracy and testing stability.

2. Photovoltaic Industry Applications

In the production of photovoltaic silicon wafers, SiC paddles are key load-bearing components in high-temperature heat treatment equipment such as diffusion furnaces and annealing furnaces. SiC paddles sintered from high-purity, ultra-fine β-SiC powder feature high-temperature resistance, anti-deformation properties, and low impurity contamination. They can stably carry silicon wafers during prolonged high-temperature operation, effectively preventing metal contamination and safeguarding the conversion efficiency and product quality of photovoltaic cells.

3. Other High-End Application Fields

Beyond the above primary applications, high-purity nano-β-SiC powder is also widely used in high-temperature structural components for aerospace, radiation-resistant materials for the nuclear industry, high-end bearings and seals, and specialty optical windows, demonstrating broad development prospects.

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99.99% sic 99.99% beta sic 4N Nano Silicon Carbide