Silicon Carbide Nanowire Used in Field Emission Nano SiC Wires

Silicon Carbide Nanowire Used in Field Emission Nano SiC Wires

Specification:

Name: silicon carbide nanowire(SiC-NWs)

Diameter: 100-500nm

Length: 20-100um

Purity: 99%

Related materials: nano/submicron/micron SiC powders, SiC whisker

Advantages and Applications: 

SiC nanowires have excellent mechanical, electrochemical and thermal conductivity properties make them can be applied in many fields, such as field emission, reinforcement and toughening materials, supercapacitors, electromagnetic wave absorption device catalysis and other fields.

In field emission: 
As silicon carbide nanowires have excellent thermal conductivity, their band gap width is higher than 2.3 eV, and their field emission performance is excellent,  they can be used in integrated circuit chips, vacuum microelectronic devices, etc.

The above information is for reference only. For further details, they're subject to actual applications and tests.